A Silicon Carbide (SiC) Horizontal Furnace Tube is a high-performance ceramic tube manufactured using reaction sintering or chemical vapor deposition (CVD) processes, specifically designed for high-temperature and corrosive industrial environments. It serves as a process tube, operating in atmospheres containing oxygen, nitrogen, and trace hydrogen chloride, with a typical working temperature of 1250°C and the capability to withstand even higher temperatures. Its core value lies in leveraging the intrinsic properties of silicon carbide—extremely high hardness, high stiffness, low coefficient of thermal expansion, high thermal conductivity, and exceptional chemical stability—to ensure outstanding dimensional stability, structural integrity, and long service life under extreme conditions of heat, corrosion, and thermal shock. This provides a reliable high-temperature processing environment for advanced industries such as semiconductor manufacturing and metallurgy.
SiC Horizontal Furnace Tube Parameters
| Parameter Category | Parameter Name | Typical Value/Range | Significance |
| Material Characteristics | Coefficient of Thermal Expansion | ~4.5×10⁻⁶/°C | Extremely low thermal expansion ensures dimensional stability at high temperatures and excellent thermal shock resistance. |
| Thermal Conductivity | ~45 W/(m·K) (@1200°C) | High thermal conductivity facilitates rapid temperature equalization and reduces thermal gradients. |
| Flexural Strength | >250 MPa | High mechanical strength resists deformation and ensures structural stability. |
| Maximum Service Temperature | >1700°C (oxidizing atmosphere) | Resistance to extreme temperatures adapts to high-temperature industrial environments. |
| Mohs Hardness | 9.5 | High hardness endows the component with exceptional wear resistance and long life. |
| Functional Characteristics | Working Atmosphere | Oxygen, nitrogen, hydrogen chloride, etc. | Adapts to process atmospheres common in semiconductor and photovoltaic industries. |
| Chemical Stability | Resists acid/alkali and plasma erosion | Excellent chemical inertness suitable for harsh chemical environments. |
SiC Horizontal Furnace Tube Applications
Silicon Carbide Horizontal Furnace Tubes play a critical role in multiple high-end manufacturing sectors due to their superior performance:
- Semiconductor Manufacturing: Used in processes such as diffusion, oxidation, and chemical vapor deposition (CVD) to carry and heat-treat silicon wafers, ensuring process purity and uniformity.
- Photovoltaic Industry: Applied in production lines for high-efficiency solar cells (e.g., TOPCon, HJT), supporting silicon wafers in LPCVD equipment for passivation layer deposition, diffusion, and annealing.
- Metallurgy and High-Temperature Processing: Serves as a furnace tube in non-ferrous metal smelting (e.g., aluminum, copper) and steel manufacturing, withstanding corrosion from molten metals and high-temperature loads.
- Industrial Kilns: Used in tunnel kilns and shuttle kilns as high-temperature furnace tubes or kiln furniture, enhancing operational efficiency and service life.
SiC Horizontal Furnace Tube Characteristics
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3D printed integrated forming
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Base material impurity content <300 ppm
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CVD silicon carbide coating base material impurity content <5 ppm
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High thermal conductivity
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High thermal shock stability
Customized SiC Ceramic Components of ZMSH
ZMSH supports precision custom machining of various silicon carbide (SiC) ceramic products. Whether for special dimensions, complex structures, or specific performance requirements, we can achieve them through processes such as reaction sintering, pressureless sintering, and chemical vapor deposition (CVD). If you have needs for silicon carbide ceramic component design, material selection, or application scenario adaptation, please feel free to inquire. We will provide technical solutions and rapid response services.
SiC Horizontal Furnace Tube FAQ
Q1: What is the primary application of a silicon carbide horizontal furnace tube?
A1: It is primarily used in high-temperature processes (up to 1700°C) within semiconductor manufacturing and photovoltaic industries, such as diffusion, oxidation, and chemical vapor deposition (CVD), ensuring precise thermal treatment and coating uniformity for wafers and solar cells.
Q2: Why choose silicon carbide over traditional materials for horizontal furnace tubes?
A2: Silicon carbide offers exceptional thermal stability (low CTE ~4.5×10⁻⁶/℃), high thermal conductivity (~45 W/m·K at 1200°C), and superior chemical inertness, enabling longer service life, reduced maintenance costs, and reliable performance in corrosive atmospheres (e.g., oxygen, nitrogen, HCl) compared to quartz or metal alternatives.
Tags: #SiC Horizontal Furnace Tube, #CVD Coating, #High-Purity, #Customized, #SiC Ceramics, #Process Tube, #High Thermal Conductivity
